GaAs Chip Material Infrared Emitting Diode 0.06 Watt 850nm ir led chip 0850 SMD light emitting diode
Product Details:
Place of Origin: China (mainland)
Brand Name: Double Light
Certification: ISO9001:2008,ROHS
Model Number: DL-PCB0805IRCA-1IR120
Payment & Shipping Terms:
Minimum Order Quantity: 10,000pcs
Packaging Details: Dimensions per Unit:0.28 × 0.2 × 0.13 Meters
• Weight per Unit:3.5 Kilograms
• Units per Export Carton:40000
• Export Carton Dimensions L/W/H: 0.45 × 0.28 × 0.27 Meters
• Export Carton Weight:14.2 Kilograms
Delivery Time: 5-7 working days after received your payment
Payment Terms: Telegraphic Transfer in Advance (Advance TT, T/T)
Supply Ability: 15,000,000pcs per Day
- Product Description
- parameter
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Product Name:
0805 Infrared LEDs
Diameter:
SMD 0805
Emitted Color:
SMD Infrared LED
Peak Emission Wavelength:
940nm
Chip Material:
GaAlAs
Lens Type:
Water Clear
Forward Voltage @20ma:
1.1-1.4V
Viewing Angle:
120 Deg
Highlight:
light emitting diode led, ir emitting diode
GaAs Chip Material 120 Degree 0.06 Watt 850nm ir led chip 0850 SMD light emitting diode
SMD Infrared Emitting Diode
Features:
- Package in 8mm tape on 7" diameter reel.
- Compatible with automatic placement equipment.
- Compatible with infrared and vapor phase reflow solder process.
- Mono-color type.
- The product itself will remain within RoHS compliant Version.
Descriptions:
- The 0805IR is an infrared emitting diode in miniature SMD package which is molded in a water clear plastic with flat top view lens.
- The device is spectrally matched with photodiode and phototransistor.
Applications:
- PCB mounted infrared sensor.
- Infrared emitting for miniature light barrier.
- Floppy disk drive.
- Optoelectronic switch.
- Smoke detector.
Absolute Maximum Ratings at Ta=25℃
Parameters Symbol Min. Typ. Max. Unit Test Condition Radiant Intensity * Ee 0.20 0.35 --- mW/sr IF=20mA --- 2.50 --- IF=100mA
(Pulse Width≤100µs, Duty≤1%)
Viewing Angle * 2θ 1/2 --- 140 --- Deg IF=20mA (Note 2) Peak Emission Wavelength λp --- 940 --- nm IF=20mA (Note 3) Spectral Bandwidth △λ --- 50 --- nm IF=20mA Forward Voltage VF 0.80 1.20 1.50 V IF=20mA --- 1.60 1.80 IF=100mA
(Pulse Width≤100µs, Duty≤1%)
Reverse Current IR --- --- 10 µA VR=5V Notes:
Luminous (Radiant) Intensity Measurement allowance is ± 10%. θ1/2 is the off-axis angle at which the luminous intensity is half the axial luminous intensity. The dominant wavelength (λp) is derived from the CIE chromaticity diagram and represents the single wavelength which defines the color of the device.
Parameters Symbol Max. Unit Power Dissipation PD 100 mW Peak Forward Current
(1/10 Duty Cycle, 0.1ms Pulse Width)
IFP 1.00 A Forward Current IF 50 mA Reverse Voltage VR 5 V Operating Temperature Range Topr -40℃ to +80℃ Storage Temperature Range Tstg -40℃ to +100℃ Lead Soldering Temperature Tsld 260℃ for 5 Seconds Infrared LED Emitting Diodes Package Dimension:
-
Product Details:
Place of Origin: China (mainland)
Brand Name: Double Light
Certification: ISO9001:2008,ROHS
Model Number: DL-PCB0805IRCA-1IR120
Payment & Shipping Terms:
Minimum Order Quantity: 10,000pcs
Packaging Details: Dimensions per Unit:0.28 × 0.2 × 0.13 Meters
• Weight per Unit:3.5 Kilograms
• Units per Export Carton:40000
• Export Carton Dimensions L/W/H: 0.45 × 0.28 × 0.27 Meters
• Export Carton Weight:14.2 Kilograms
Delivery Time: 5-7 working days after received your payment
Payment Terms: Telegraphic Transfer in Advance (Advance TT, T/T)
Supply Ability: 15,000,000pcs per Day
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