1W High Power Infrared light emission diode 350-700mA 1.5-1.8V 850nm infrared led
| Product Name: | High Power Infrared LED | Diameter: | LED Infrared |
|---|---|---|---|
| Emitted Color: | Infrared LED | Peak Emission Wavelength: | 850nm |
| Chip Material: | GaAlAs | Lens Type: | Water Clear |
| Forward Voltage @20ma: | 1.4-1.8V | Viewing Angle: | 120 Deg |
| Highlight: | light emitting diode led , ir emitting diode | ||
1W High Power Infrared light emission diode 350-700mA 1.5-1.8V 850nm infrared led
Features:
- Free air transmission system.
- Optoelectronic switch.
- Floppy disk drive.
- Infrared applied system.
- Smoke detector.
Applications:
The DL-HP10SIR Infrared Emitting Diode is a high intensity diode. The device is spectrally matched with phototransistor, photodiode and infrared receiver module.
Descriptions:
- High reliability.
- High radiant intensity.
- Low forward voltage.
- Peak wavelength λp=850nm.
- The product itself will remain within RoHS compliant version.
1W 3 Watt 5Watt 730nm 810nm 850nm 880nm 900nm 980nm 940nm High Power IR LED
- CCTV
- Wireless communication
- Indoor Lighting
- Outdoor Lighting
Absolute Maximum Ratings at Ta=25℃
| Parameters | Symbol | Max. | Unit |
| Power Dissipation | PD | 1000 | mW |
|
Peak Forward Current (1/10 Duty Cycle, 0.1ms Pulse Width) |
IFP | 1.00 | A |
| Forward Current | IF | 350 | mA |
| Reverse Voltage | VR | 5 | V |
| Operating Temperature Range | Topr | -10℃ to +70℃ | |
| Storage Temperature Range | Tstg | -20℃ to +80℃ | |
| Soldering Temperature | Tsld | 260℃ for 5 Seconds | |
Electrical Optical Characteristics at Ta=25℃
| Parameters | Symbol | Min. | Typ. | Max. | Unit | Test Condition |
| Radiant Intensity | Ie | 110 | 180 | --- | mW/Sr | IF=350mA |
| Viewing Angle * | 2θ1/2 | --- | 120 | --- | Deg | (Note 1) |
| Peak Emission Wavelength | λp | --- | 850 | --- | nm | IF=350mA |
| Spectral Bandwidth | △λ | --- | 45 | --- | nm | IF=350mA |
| Forward Voltage | VF | 1.30 | 1.50 | 1.80 | V | IF=350mA |
| Reverse Current | IR | --- | --- | 50 | µA | VR=5V |
Notes:
1. Luminous Radiant is measured with a light sensor and filter combination that approximates the CIE eye-response curve.
2. θ1/2 is the off-axis angle at which the luminous intensity is half the axial luminous intensity.
- Product Description
- parameter
-
Infrared emitting diodes (IR LEDs) are semiconductor devices that emit infrared light when an electric current passes through them. They are widely used in electronic applications such as remote controls, night-vision equipment, security systems, optical communication, and sensing devices. IR LEDs operate at specific wavelengths, typically between 850 nm and 940 nm, allowing precise transmission and detection of infrared signals.
These diodes offer advantages including low power consumption, long lifespan, and fast response times. Their compact size and reliability make them ideal for integration into consumer electronics, industrial automation systems, and medical instruments. By converting electrical energy directly into infrared light, IR LEDs enable efficient and accurate signal transmission, motion detection, and object sensing, providing essential functionality in modern electronic and optical systems.
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Product Name: High Power Infrared LED Diameter: LED Infrared Emitted Color: Infrared LED Peak Emission Wavelength: 850nm Chip Material: GaAlAs Lens Type: Water Clear Forward Voltage @20ma: 1.4-1.8V Viewing Angle: 120 Deg Highlight: light emitting diode led , ir emitting diode 1W High Power Infrared light emission diode 350-700mA 1.5-1.8V 850nm infrared led
Features:
- Free air transmission system.
- Optoelectronic switch.
- Floppy disk drive.
- Infrared applied system.
- Smoke detector.
Applications:
The DL-HP10SIR Infrared Emitting Diode is a high intensity diode. The device is spectrally matched with phototransistor, photodiode and infrared receiver module.
Descriptions:
- High reliability.
- High radiant intensity.
- Low forward voltage.
- Peak wavelength λp=850nm.
- The product itself will remain within RoHS compliant version.
1W 3 Watt 5Watt 730nm 810nm 850nm 880nm 900nm 980nm 940nm High Power IR LED
- CCTV
- Wireless communication
- Indoor Lighting
- Outdoor Lighting
Absolute Maximum Ratings at Ta=25℃
Parameters Symbol Max. Unit Power Dissipation PD 1000 mW Peak Forward Current
(1/10 Duty Cycle, 0.1ms Pulse Width)
IFP 1.00 A Forward Current IF 350 mA Reverse Voltage VR 5 V Operating Temperature Range Topr -10℃ to +70℃ Storage Temperature Range Tstg -20℃ to +80℃ Soldering Temperature Tsld 260℃ for 5 Seconds Electrical Optical Characteristics at Ta=25℃
Parameters Symbol Min. Typ. Max. Unit Test Condition Radiant Intensity Ie 110 180 --- mW/Sr IF=350mA Viewing Angle * 2θ1/2 --- 120 --- Deg (Note 1) Peak Emission Wavelength λp --- 850 --- nm IF=350mA Spectral Bandwidth △λ --- 45 --- nm IF=350mA Forward Voltage VF 1.30 1.50 1.80 V IF=350mA Reverse Current IR --- --- 50 µA VR=5V Notes:
1. Luminous Radiant is measured with a light sensor and filter combination that approximates the CIE eye-response curve.
2. θ1/2 is the off-axis angle at which the luminous intensity is half the axial luminous intensity.
Infrared Emitting Diode Package Dimension:
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