940nm Infrared Emitting Diode Tranmitter IR Module Infrared Phototransistor Ondition IC=100μA, Ee=0mW/cm²
Product Details:
Place of Origin: China (mainland)
Brand Name: Double Light
Certification: ISO9001:2008,ROHS
Model Number: DL-503PTC
Payment & Shipping Terms:
Minimum Order Quantity: 10,000pcs
Packaging Details: Dimensions per Unit:0.28 × 0.2 × 0.13 Meters
• Weight per Unit:3.5 Kilograms
• Units per Export Carton:40000
• Export Carton Dimensions L/W/H: 0.45 × 0.28 × 0.27 Meters
• Export Carton Weight:14.2 Kilograms
Delivery Time: 5-7 working days after received your payment
Payment Terms: Telegraphic Transfer in Advance (Advance TT, T/T)
Supply Ability: 15,000,000pcs per Day
- Product Description
- parameter
-
Product Name:
LED Phototransistor
Diameter:
Dip 5mm
Emitted Color:
Phototransistor
Peak Emission Wavelength:
940nm
Chip Material:
Silicon
Lens Type:
Water Clear
Forward Voltage @20ma:
1.1-1.4V
Viewing Angle:
80 Deg
Highlight:
ir emitting diode, 940nm infrared led
940nm Infrared Emitting Diode Tranmitter IR Module Infrared Phototransistor Ondition IC=100μA, Ee=0mW/cm²
5mm LED Phototransistor
Features:
- 5mm round standard t-1 3/4 package.
- Fast response time.
- High photo sensitivity.
- Small junction capacitance.
- The product itself will remain within RoHS compliant Version.
Descriptions:
- The 583PTD is a high speed and high sensitive silicon NPN phototransistor in a standard Φ5 package.
- Due to its black epoxy, the device is matched to visible light and infrared radiation.
Applications:
- Infrared applied system.
- Optoelectronic automatic control system.
- Optoelectronic switch.
- Camera.
- Printer.
- Counters and sorters.
- Encoders.
- Floppy disk drive.
- Video camera, tape and card readers.
- Position sensors.
Absolute Maximum Ratings at Ta=25℃
Parameters Symbol Rating Unit Power Dissipation PD 75 mW Collector-Emitter Voltage VCEO 30 V Emitter-Collector-Voltage VECO 5 V Collector Current IC 20 mA Operating Temperature TOPR -40 to +85 ℃ Storage Temperature TSTG -40 to +100 ℃ Lead Soldering Temperature TSOL 260℃ ℃ Electrical Optical Characteristics at Ta=25℃
Parameters Symbol Min. Typ. Max. Unit Condition Collector-Emitter Breakdown Voltage BVCEO 30 --- --- V IC=100μA,
Ee=0mW/cm²
Emitter-Collector Breakdown Voltage BVECO 5 --- --- V IE=100μA,
Ee=0mW/cm²
Collector-Emitter Saturation Voltage VCE(SAT) --- --- 0.40 V IC=0.70mA,
Ee=1mW/cm2
Collector Dark Current ICEO --- --- 100 nA Ee=0mW/cm²,
VCE=20V
On-State Collector Current IC(ON) 0.70 2.00 --- mA Ee=1mW/cm²,
VCE=5V
Optical Rise Time (10% to 90%) TR --- 15 --- μs VCE=5V,
IC=1mA,
RL=100Ω
Optical Fall Time (90% to 10%) TF --- 15 --- Reception Angle 2θ1/2 --- 30 --- Deg Wavelength Of Peak Sensitivity λP --- 940 --- nm Rang Of Spectral Bandwidth λ0.5 400 --- 1100 nm Infrared LED Emitting Diodes Package Dimension:
-
Product Details:
Place of Origin: China (mainland)
Brand Name: Double Light
Certification: ISO9001:2008,ROHS
Model Number: DL-503PTC
Payment & Shipping Terms:
Minimum Order Quantity: 10,000pcs
Packaging Details: Dimensions per Unit:0.28 × 0.2 × 0.13 Meters
• Weight per Unit:3.5 Kilograms
• Units per Export Carton:40000
• Export Carton Dimensions L/W/H: 0.45 × 0.28 × 0.27 Meters
• Export Carton Weight:14.2 Kilograms
Delivery Time: 5-7 working days after received your payment
Payment Terms: Telegraphic Transfer in Advance (Advance TT, T/T)
Supply Ability: 15,000,000pcs per Day
Product inquiry
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